2PA1774J

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification PNP general purpose transistor FEATURES Power dissipation comparable to SOT23 Low output capacitance Low saturation voltage VCEsat Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification in miniaturized application areas such as telecom and multimedia. handbook, halfpage 2PA1774J PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 MAM411 DESCRIPTION PNP transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. NPN complement: 2PC4617J. MARKING TYPE NUMBER 2PA1774JQ 2PA1774JR 2PA1774JS MARKING CODE YQ YR YS Fig.1 1 Top view 2 Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −50 −50 −5 −100 −200 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 M...