DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015 PNP general purpose transistor
Product specification Supersedes data of 1997 May 01 1999 Apr 08
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: 2PC1815.
1 handbook, halfpage
2PA1015
PINNING PIN 1 2 3 .
PNP general purpose transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015 PNP general purpose transistor
Product specification Supersedes data of 1997 May 01 1999 Apr 08
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: 2PC1815.
1 handbook, halfpage
2PA1015
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
2 3
2 1 3
MAM285
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −50 −50 −5 −150 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER c.