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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/621 Devices 2N7369 Qua...
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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/621 Devices 2N7369 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Symbol
Value
Units
Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W
Collector-Emitter
Voltage 80 VCEO Collector-Base
Voltage 80 VCBO Emitter-Base
Voltage 7.0 VEBO Base Current IB 4.0 Collector Current 10 IC DataSheet4U.com Total Power Dissipation @ TC = +250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg
DataShee
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC
0
Max. 1.5
TO-254*
1) Derate linearly 0.657 W/ C for TC > 25 C
*See appendix A for package outline
0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage IC = 0.2 Adc Collector-Emitter Cutoff Current VCE = 70 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VCEO(sus) ICES ICEX IEBO 80 5.0 5.0 5.0 Vdc mAdc mAdc mAdc
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2N7369 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.0 Vdc IC = 3.0 Adc, VCE = 2.0 Vdc Collector-Emitter Satura...