2N7002
N-Channel Enhancement Mode Power MOSFET
General Features
VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω...
2N7002
N-Channel Enhancement Mode Power
MOSFET
General Features
VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating HBM 2300V
High power and current handing capability Lead free product is acquired Surface mount package
Schematic diagram
Application
Direct logic-level interface: TTL/
CMOS Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. Battery operated systems Solid-state relays
Marking and pin assignment
Package Marking And Ordering Information
Device Marking 7002
Device 2N7002
Device Package SOT-23
Reel Size Ø180mm
SOT-23 top view
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current (TJ =150 ) Drain Current-Pulsed (Note 1)
TA =25 TA =100
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol VDS VGS
ID
IDM PD TJ,TSTG
Thermal Resistance,Junc...