2N7000CSM
MECHANICAL DATA Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
0.31 rad. (0.012)
0.51 ...
2N7000CSM
MECHANICAL DATA Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
0.31 rad. (0.012)
0.51 ± 0.10 (0.02 ± 0.004)
2.54 ± 0.13 (0.10 ± 0.005)
3
FEATURES
0.76 ± 0.15 (0.03 ± 0.006)
2
1
V(BR)DSS = 60V RDS(ON) = 5W
A 1.40 (0.055) max.
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.31 rad. (0.012)
ID = 200mA Hermetic Ceramic Surface Mount package
1.02 ± 0.10 (0.04 ± 0.004)
SOT23 CERAMIC (LCC1 PACKAGE) Underside View
PAD 1 – Gate PAD 2 – Source PAD 3 – Drain
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS VGS ID IDM PD Tj Tstg Drain – Source
Voltage Gate – Source
Voltage Drain Current Pulsed Drain Current * Power Dissipation Storage Temperature Range @ TCASE = 25°C Operating Junction Temperature Range @ TCASE = 25°C 60V ±40V 200mA 500mA 300mW –55 to 150°C –55 to 150°C
* Pulse width limited by maximum junction temperature.
Magnatec.
Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim. 8/00
2N7000CSM
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS V(BR)DSS Gate – Source Breakdown
Voltage VGS(th) IGSS IDSS ID(on)* Gate Threshold
Voltage Gate – Body Leakage Current Zero Gate
Voltage Drain Current On–State Drain Current VGS = 0V VDS = VGS VDS = 60V
Test Conditions
ID = 10mA ID = 0.25mA VGS = 0V TCASE = 125°C
Min.
60 0.8
Typ.
70
Max.
Unit
V
3.0 ...
