2N6989

Data Sheet No. 2N6989 Type 2N6989 Geometry 0400 Polarity NPN Qual Level: JAN - JANS Features: An array of four independent NPN silicon switching transistors. Housed in a cerdip case. Also available in chip form using the 0400 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/559 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available. Generic Part Number: 2N6989 REF: MIL-PRF-19500/559 Cerdip Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 50 75 6.0 800 -65 to +200 -65 to +200 Unit V V V mA o C C o Data Sheet No. 2N6989 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA, pulsed Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 50 V Collector-Base Cutoff Current VCB = 60 V Emitter-Base Cutoff Current VEB = 4 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICES ICBO1 IEBO Min 75 50 6.0 ------- Typ 120 65 7.0 3.0 2.0 0.5 Max ------50 10 10 Unit V V V nA nA nA ON Characteristics DC Current Gain IC = 100 µA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V (pulse test) IC = 500 mA, VCE = 10 V (pulse test)...