2N6987

Data Sheet No. 2N6987 Type 2N6987 Geometry 0600 Polarity PNP Qual Level: JAN - JANS Features: An array of four independent PNP silicon switching transistors. Housed in a cerdip case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/558 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available. Generic Part Number: 2N6987 REF: MIL-PRF-19500/558 Cerdip Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 60 60 5.0 600 -65 to +200 -65 to +200 Unit V V V mA o C C o Data Sheet No. 2N6987 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA, pulsed Collector-Base Cutoff Current VCB = 50 V Emitter-Base Cutoff Current VEB = 3.5 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 IEBO Min 60 60 5.0 ----- Typ 100 70 9.0 0.25 0.1 Max ------10 50 Unit V V V nA nA ON Characteristics DC Current Gain IC = 100 µA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V (pulse test) IC = 500 mA, VCE = 10 V (pulse test) Collector-Emitter Saturation Voltage IC = 150 mA, IB = ...