INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6762
DESCRIPTION ·VGS Rated at ±20V...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
2N6762
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements
APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source
Voltage (VGS=0)
500 V
Gate-Source
Voltage
±20
V
Drain Current-continuous@ TC=37℃ 4.5 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
isc Product Specification
2N6762
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.0A
IGSS Gate Source Leakage Current
VGS= 20V;VDS= 0
IDSS Zero Gate
Voltage Drain Current VDS= 500V; VGS= 0
VSD Diode Forward
Voltage
IF= 4.5A; VGS= 0
MIN MAX UNIT 500 V
24V 1.5 Ω 100 nA 1 mA 1.4 V
isc website:www.iscsemi.cn
2 isc & iscsemi is registe...