DatasheetsPDF.com

2N6740 Datasheet

Part Number 2N6740
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Power Transistors
Datasheet 2N6740 Datasheet2N6740 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6738 2N6739 2N6740 DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6738 VCBO Collector-base vo.

  2N6740   2N6740






Part Number 2N6740
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2N6740 Datasheet2N6740 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(.

  2N6740   2N6740







Silicon NPN Power Transistors

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6738 2N6739 2N6740 DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6738 VCBO Collector-base voltage 2N6739 2N6740 2N6738 VCEO Collector-emitter voltage 2N6739 2N6740 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance from junction to case VALUE 450 550 650 300 350 400 8 8 10 4 100 150 -65~150 UNIT V V V A A A W MAX 1.25 UNIT /W .


2018-07-06 : D2601N    D2601D    D2601A    D2601B    D2601    D2601F    D2601E    D2601M    D2600M    S3706E   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)