2N6739

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 550 V VCEX Collector-Emitter Voltage-VBE= -1.5V 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous ICM Collector Current-Peak 8 A 10 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W 2N6739 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 4A VBE(sat) Base-Emitter Saturation Volta...