2N6693

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 2N6678 2N6691 2N6693 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6676 2N6678 2N6691 2N6693 300 400 450 650 450 650 8.0 5.0 15 2N6676 2N6691 2N6678 2N6693 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6676, 2N6678 TO-3 (TO-204AA)* @ TA = 250C @ TC = 250C(1) Operating & Storage Junction Temperature Range Total Power Dissipation PT Top; Tstg Symbol RθJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 mW/0C for TA > 250C 3) Derate linearly 17.1 mW/0C for TA > 250C 0 2N6691, 2N6693 TO-61* * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = 1.5 Vdc VCE = 650 Vdc, VBE = 1.5 Vdc 2N6676, 2N6691 2N6678, 2N6693 2N6676, 2N6691 2N6678, 2N6693 V(BR)CEO 300 400 0.1 0.1 Vdc ICEX mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characterist...