N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6661
• VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshol...
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
2N6661
VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold
Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain – Source
Voltage
90V
VGS Gate – Source
Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
0.9A
IDM Pulsed Drain Current (1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ Operating Temperature Range
-55 to +150°C
Tstg Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
RθJA
Thermal Resistance, Junction To Ambient
Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2%
Min.
Typ.
Max. Units 25 °C/W 172 °C/W
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