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2N6649

Part Number	2N6649
Manufacturer	Microsemi Corporation
Description	(2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR
Published	Jun 4, 2007
Detailed Description	TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qual...
Datasheet	2N6649 PDF File

Overview

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.
0 -0.
25 -10 5.
0 85 -65 to +175 Max.
1.
76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W www.
DataSheet4U.
com @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RθJC THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.
3 mW/0C for TA > +2...

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