2N6569

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION ·With TO-3 package ·Complement to type 2N6594 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 40 5 12 24 5 17 34 100 200 -65~200 UNIT V V V A A A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=4A; IB=0.4A IC=12A; IB=2.4A IC=4A; IB=0.4A VCE=40V; IB=0 VCB=45V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=3V IC=12A ; VCE=4V IC=1.0A ; VCE=4V;f=0.5MHz 15 5 1.5 MIN 40 TYP. SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE-1 hFE-2 f...