isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Vo...
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High
Voltage,High Speed ·Low Saturation
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter
Voltage
650
V
VCEO(SUS) Collector-Emitter
Voltage
300
V
VEBO
Emitter-Base
Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.4
UNIT ℃/W
2N6544
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 5A; IB= 1.0A
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 8A; IB= 2.0A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 5A; IB= 1.0A
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
ICBO
Collector Base Cutoff Current
VCB=650V; IE= 0
hFE-1
DC Current Gain
IC= 2.5A; VCE= 3V
hFE-2
DC Current Gain
IC= 5A; VCE= 3V
fT
...
