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2N6487 2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES COMPLEMEN...
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2N6487 2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low frequency switching applications. The 2N6487 complementary type is 2N6490. TO-220
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEX V CEO V EBO IC IB P tot T stg Tj Collector-Base
Voltage (I E = 0) Collector-Emitter
Voltage (V BE =-1.5V,R BE =100 Ω ) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. Operating Junction Temperature
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Value 2N6487 2N6490 70 70 60 5 15 5 75 -65 to 150 150 2N6488 90 90 80
Unit
V V V V A A W
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C C
For PNP types
voltage and current values are negative.
April 1999
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2N6487 / 2N6488 / 2N6490
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70
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C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions for 2N6487/2N6490 for 2N6488 T c = 150 o C for 2N6487/2N6490 for 2N6488 for 2N6487/2N6490 for 2N6488 for 2N6487/2N6490 for 2N6488 V EB = 5 V I C = 200 mA for 2N6487/2N6490 for 2N6488 I C = 200 mA for 2N6487/2N6490 for 2N6488 V ...