2N6488

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6488 DESCRIPTION ·DC Current Gain Specified to 15 Amperes- : hFE =20-150@ IC= 5.0A =5.0(Min)@ IC=15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=80Vdc(Min) ·Complement to Type 2N6491 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 90 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current 5 Collector Power Dissipation @ TC=25℃ 75 PC Collector Power Dissipation @ Ta=25℃ 1.8 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A; IB=0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=15A; IB=5.0A VBE(on)-1 Base-Emitter On Voltage IC=5A ; VCE=4V VBE(on)-2 Base-Emitter On Voltage IC=15A ; VCE=4V ICEO Collector Cutoff Current VCE=40V;IB=0 IEBO Emitter Cutoff Current VEB=5V; IC=0 hFE-1 DC ...