2N6476

2N6473 2N6474 NPN 2N6475 2N6476 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473, 2N6475 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage (RBE=100Ω) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N6473 2N6475 110 2N6474 2N6476 130 110 130 100 120 5.0 4.0 2.0 40 -65 to +150 3.125 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6473 2N6475 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=Rated VCEO, VBE=1.5V - 100 ICEV VCE=Rated VCEO, VBE=1.5V, TC=100°C - 2.0 ICER...