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2N6469 Datasheet

Part Number 2N6469
Manufacturers SavantIC
Logo SavantIC
Description Silicon Power Transistor
Datasheet 2N6469 Datasheet2N6469 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6469 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base vo.

  2N6469   2N6469






Part Number 2N6469
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar PNP Device
Datasheet 2N6469 Datasheet2N6469 Datasheet (PDF)

2N6469 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar PNP Device. VCEO = 50V IC = 15A All .

  2N6469   2N6469







Part Number 2N6469
Manufacturers ETC
Logo ETC
Description SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
Datasheet 2N6469 Datasheet2N6469 Datasheet (PDF)

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  2N6469   2N6469







Silicon Power Transistor

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6469 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -15 -5 125 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N6469 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter sustaining voltage IC=-0.2A ;IB=0 IC=-5A; IB=-0.5A IC=-15A; IB=-3A IC=-15A ; VCE=-4V VCE=-20V; IB=0 VCE=-45V; VBE=-1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-0.5A ; VCE=-10V -40 V Collector-emitter saturation voltage -1.3 V Collector-emitter saturation voltage -3.5 V Base-emitter on voltage -3.5 V Collector cut-.


2009-02-02 : WT5041    WT5058    WT5081    WT5082    STK430II    2N6360    2N6372    2N6385    2N6383    2N6384   


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