2N6425

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -325 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 20 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6425 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6425 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-5mA IEBO Emitter -Base Cutoff Current VBE=- 6V ICEO Collector-Emitter Cutoff Current VCB=- 200V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.25A; IB=-0.025A VBE(on) Base-Emitter On Voltage IC= -0.1A; VCE=-10V hFE DC Current Gain IC=-0.1A; VCE=-20V MIN TYP. MAX UNIT -300 V -100 uA -0.25 mA -2.5 V -1.0 V 35 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products ...