2N6420 2N6421 2N6422 2N6423
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL...
2N6420 2N6421 2N6422 2N6423
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series devices are silicon PNP power transistors designed for high speed switching and high
voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB PD TJ, Tstg JC
2N6422 2N6420 2N6421 2N6423
250 375 500 175 250 300 6.0 6.0 6.0 1.0 2.0 2.0
5.0 1.0 35 -65 to +200 5.0
UNITS V V V A A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=225V, VBE=1.5V (2N6420)
ICEV
VCE=340V, VBE=1.5V (2N6421)
ICEV
VCE=450V, VBE=1.5V (2N6422)
ICEV
VCE=450V, VBE=1.5V (2N6423)
ICEV
VCE=225V, VBE=1.5...