2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control app...
2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking
Voltage to 800 V These are Pb−Free Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State
Voltage (Note 1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open)
2N6400 2N6401 2N6402 2N6403 2N6404 2N6405
VDRM, VRRM
50 100 200 400 600 800
V
On-State Current RMS (180° Conduction Angles; TC = 100°C) Average On-State Current (180° Conduction Angles; TC = 100°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 25°C) Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS) IT(AV) ITSM
I2t
16 10 160 145
A A A A2s
Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 100°C) Forward Average Gate Power (t = 8.3 ms, TC = 100°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 100°C) Operating Junction Temperature Range
PGM PG(AV)
IGM TJ
20
0.5
2.0
−40 to +125
W W A °C
Storage Temperature Range
Tstg −40 to °C +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings on...