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2N6383 Datasheet

Part Number 2N6383
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN Transistor
Datasheet 2N6383 Datasheet2N6383 Datasheet (PDF)

2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junct.

  2N6383   2N6383






Part Number 2N6383
Manufacturers TAITRON
Logo TAITRON
Description Darlington Power Transistor
Datasheet 2N6383 Datasheet2N6383 Datasheet (PDF)

Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Darlington Power Transistor NPN: 2N6383, 2N6384, 2N6385 PNP: 2N6648, 2N6649, 2N6650 Features • High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 .

  2N6383   2N6383







Part Number 2N6383
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description NPN DARLINGTON POWER SILICON TRANSISTOR
Datasheet 2N6383 Datasheet2N6383 Datasheet (PDF)

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) .

  2N6383   2N6383







Part Number 2N6383
Manufacturers SavantIC
Logo SavantIC
Description (2N6383 - 2N6385) Silicon Power Transistor
Datasheet 2N6383 Datasheet2N6383 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6648/6649/6650 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6383 2N6384 2N6385 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings.

  2N6383   2N6383







NPN Transistor

2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEX VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6383 2N6384 2N6385 40 60 80 40 60 80 40 60 80 5.0 10 15 250 100 -65 to +200 1.75 UNITS V V V V A A mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO BVCER BVCER BVCER BVCEV BVCEV BVCEV VCEV=Rated VCEO, VBE(off)=1.5V VCEV=Rated VCEO, VBE(off)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=200mA (2N6383) IC=200mA (2N6384) IC=200mA (2N6385) IC=200mA, RBE=100Ω (2N6383) IC=200mA, RBE=100Ω (2N6384) IC=200mA, RBE=100Ω (2N6385) IC=200mA, VBE(off)=1.5V (2N6383) IC=200mA, VBE(off)=1.5V (2N6384) IC=200mA, VBE(off)=1.5V (2N6385) 40 60 80 40 60 80 40 60 80 MAX 300 3.0 1.0 10 UNITS μA mA mA mA V V V V V V V V V R1 (28-August 2008) CentralTM Semiconductor Corp. 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIO.


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