2N6351

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCER VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RθJC 2N6352 2N6353 W W 0 C 2N6350, 2N6351 TO-33* 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50% 2) Derate linearly @ 5.72 mW/0C above TA > 250C 3) Derate linearly @ 50 mW/0C above TC > 1000C 4) Derate linearly @ 11.4 mW/0C above TA > 250C 5) Derate linearly @ 250 mW/0C above TC > 1000C 2N6350 2N6351 20 2N6352 2N6353 4.0 Unit 0 C/W 2N6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω 2N6350, 2N6352 2N6351, 2N6353 V(BR)CER 80 150 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES ELECTRICAL CHARACTERISTICS (c...