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2N6341 Datasheet

Part Number 2N6341
Manufacturers Motorola
Logo Motorola
Description NPN Transistor
Datasheet 2N6341 Datasheet2N6341 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain — hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitt.

  2N6341   2N6341






Part Number 2N6341
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Power Transistors
Datasheet 2N6341 Datasheet2N6341 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6338 VCBO .

  2N6341   2N6341







Part Number 2N6341
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description (2N6338 / 2N6341) NPN POWER SILICON TRANSISTOR
Datasheet 2N6341 Datasheet2N6341 Datasheet (PDF)

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509 Devices 2N6338 2N6341 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol 2N6338 100 120 2N6341 150 180 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25.

  2N6341   2N6341







Part Number 2N6341
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High-Power NPN Silicon Transistors
Datasheet 2N6341 Datasheet2N6341 Datasheet (PDF)

2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max.

  2N6341   2N6341







NPN Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain — hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Complement to 2N6436–38 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage Emitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Continuous Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range Symbol VCB VCEO VEB IC IB PD TJ, Tstg 2N6338 120 100 2N6339 2N6340 140 160 120 140 6.0 25 50 10 200 1.14 – 65 to + 200 2N6341 180 150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.


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