2N6330

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 200 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6330 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6330 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=-30mA IEBO Emitter-Base Cutoff Current VBE=-5V ICEO Collector-Emitter Cutoff Current VCE= -40V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-15A; IB=- 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-30A; IB= -7.5A VBE(on)-1 Base-Emitter On Voltage IC=-15A;VCE=-4V VBE(on)-2 Base-Emitter On Voltage IC=-30A;VCE=4V hFE-1 DC Current Gain IC=-5A; VCE= -4V hFE-2 DC Current Gain IC=-15A; VCE= -4V hFE-3 DC Current Gain IC=-30A; VCE=-4V MIN TYP. MAX UNIT -80 V -500 uA -1 mA -1.5 V -3 V -2 V -4 V 25 12 6 30 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at...