2N6314

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6312 2N6313 2N6314 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -2 75 200 -65~200 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.32 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6312 VCEO(SUS) Collector-emitter sustaining voltage 2N6313 2N6314 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N6312 ICEO Collector cut-off current 2N6313 2N6314 2N6312 ICBO Collector cut-off current 2N6313 2N6314 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 COB fT Collector cut-off cur...