2N6297

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6296 2N6297 Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6296 2N6298 Open collector Open base CONDITIONS Open emitter VALUE -60 -80 -60 -80 -5 -4 -8 -80 50 150 -65~200 V A A mA W V UNIT V VCEO VEBO IC ICM IB PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6296 V(BR)CEO Collector-emitter breakdown voltage 2N6297 VCEsat-1 VCEsat-2 VBEsat VBE ICEX ICEO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance IC=-2A ;IB=-8mA IC=-4A ;IB=-4...