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2N6286 Datasheet

Part Number 2N6286
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet 2N6286 Datasheet2N6286 Datasheet (PDF)

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rati.

  2N6286   2N6286






Part Number 2N6286
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Datasheet 2N6286 Datasheet2N6286 Datasheet (PDF)

2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collecto.

  2N6286   2N6286







Part Number 2N6286
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2N6286 Datasheet2N6286 Datasheet (PDF)

isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6283 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃.

  2N6286   2N6286







Part Number 2N6286
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description PNP DARLINGTON POWER SILICON TRANSISTOR
Datasheet 2N6286 Datasheet2N6286 Datasheet (PDF)

2N6286 and 2N6287 Available on commercial versions PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/505 DESCRIPTION This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6286 and 2N6287 • JAN, JANTX, and JA.

  2N6286   2N6286







Part Number 2N6286
Manufacturers Savantic
Logo Savantic
Description (2N6285 - 2N6287) Silicon PNP Power Transistors
Datasheet 2N6286 Datasheet2N6286 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6282/6283/6284 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6285 2N6286 2N6287 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6285 VCBO Collector-base voltage 2N6286 2N6287 2N6285 VCEO .

  2N6286   2N6286







Part Number 2N6286
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description (2N6285 - 2N6287) PNP Darlington Power Silicon Transistor
Datasheet 2N6286 Datasheet2N6286 Datasheet (PDF)

2N6285 – 2N6286 – 2N6287 PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage (IB=0) 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N62.

  2N6286   2N6286







DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6286 VCEO 80 Vdc 2N6284/87 100 Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 Emitter−Base Voltage Collector Current − Continuous Peak VEB 5.0 Vdc IC 20 Adc 40 Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C IB PD 0.5 160 0.915 Adc W W/°C Operating and Storage Temperature Range TJ, Tstg − 65 to + 200 °C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.09 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Technique.


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