2N 6278 thru 2N 6281 (SILICON)
HIGH-POWER NPN SILICON TRANSISTORS
designed for use in industrial-military power amplifi...
2N 6278 thru 2N 6281 (SILICON)
HIGH-POWER NPN SILICON TRANSISTORS
designed for use in industrial-military power amplifier and switching circuit applications.
High Collector Emitter Sustaining
Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279
= 140 Vdc (Min) - 2N6280
= 150 Vdc (Min) - 2N6281
High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc
Low Coliector·Emitter Saturation
Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc
Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max)
ts = 0.8 Ils (Max) tf = 0.25 Ils (Max)
'MAXIMUM RATINGS
Rating
Svmbol
Collector-Base
Voltage
VeB
Collector-Emitter
Voltage
VeEO
Emitter-Base
Voltage
VEB
Collector Current - Continuous Peak
Ie
Base Current
IR
Total Device Dissipation @ Te=250e Derate above 25°C
Po
Operating and Storage Junction TJ,T,tg Temperature Range
THERMAL CHARACTERISTICS
I I2N6278 2N6279 2N6280[ 2N6281
I I I120 140 160 180
I I I100 120 140 150
. .6.0
.. ..50 100
.. 20
...
