2N6276

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 240 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6276 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6276 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA IEBO Emitter-Base Cutoff Current VBE=6V ICEO Collector-Emitter Cutoff Current VCE= 160V VCE(sat) Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat) Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE DC Current Gain IC=20A; VCE=4V MIN TYP. MAX UNIT 140 V 100 uA 50 uA 3 V 3.5 V 30 120 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed...