2N6275

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N6275 = 150 Vdc (Min) — 2N6277 High DC Current Gain — hFE = 30–120 @ IC = 20 Adc = 10 (Min) @ IC = 50 Adc Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc Fast Switching Times @ IC 20 Adc tr = 0.35 ms (Max) ts = 0.8 ms (Max) tf = 0.25 ms (Max) Complement to 2N6377–79 2N6274 2N6275 2N6277* *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 250 WATTS CASE 197A–05 TO–204AE (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1) Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmit...