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2N6217 Datasheet

Part Number 2N6217
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2N6217 Datasheet2N6217 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 180 V 140 V VEBO IC PC TJ Tstg Emitter-Base.

  2N6217   2N6217






Part Number 2N6217
Manufacturers SavantIC
Logo SavantIC
Description (2N6216 / 2N6217) Silicon Power Transistor
Datasheet 2N6217 Datasheet2N6217 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION ·With TO-3 package ·High current ,high power dissipation APPLICATIONS ·For use in switching and linear power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6216 Collector-base voltage 2N6217 2N6216 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N6217 Em.

  2N6217   2N6217







NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 180 V 140 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=100℃ 71 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.46 ℃/W 2N6217 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6217 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB= 0 140 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage IC=6A; IB= 0.75A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 ICEO Collector Cutoff Current VCE= 140V; IB=0 ICBO Collector Base Cutoff Current VCB=180V; IE= 0 hFE DC Current Gain IC= 5A; VCE= 5V 20 fT Current Gain-Bandwidth Product IC= 1A; VCE= 10V; f= 1..


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