isc Silicon PNP Power Transistor
2N6108
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= -2A ·Collector-Emitter Susta...
isc Silicon PNP Power Transistor
2N6108
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= -50V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-60
V
VCEO
Collector-Emitter
Voltage
-50
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.125 ℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃/W
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
2N6108
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= -50mA ;IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -7A; IB= -3A
VBE(on) Base-Emitter On
Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -7A ; VCE= -4V
VCE= -60V; VBE(off)= -1.5V VCE= -50V; VBE(off)= -1.5V; TC= 150℃
VCE= -50V;IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC ...