2N6055

2N6053-2N6054 – PNP 2N6055-2N6056 – NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON POWER TRANSISTORS FEATURES: Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number Available Non-RoHS (standard) or RoHS compliant (add PBF suffix) MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Peak Base Current Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Thermal Resistance Junction to Case Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG RθJC 2N6053 2N6055 2N6054 2N6056 60 80 60 80 5 8.0 16 120 100 0.571 -65 to +200 1.75 Unit V V V A mA W W/°C °C °C/W ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted Characteristics Symbol Min Collector Emitter Sustaining Voltage IC = 100mA, IB = 0 2N6053, 2N6055 VCEO(sus) 60 2N6054, 2N6056 80 Collector Cutoff Current VCE = 30V, IB = 0 VCE = 40V, IB = 0 2N6053, 2N6055 ICEO - 2N6054, 2N6056 - Collector Cutoff Current VCE = 60V, VBE(off) = 1.5V 2N6053, 2N6055 - VCE = 80V, VBE(off) = 1.5V 2N6054, 2N6056 ICEX - VCE = 60V, VBE(off) = 1.5V, TC = 150°C 2N6053, 2N6055 - VCE = 80V, VBE(off) = 1.5V, TC = 150°C 2N6054, 2N6056 - Emitter Cutoff Current VEB = 5.0V, IC = 0 IEBO - DC Current Gain(1) IC = 4A, VCE = 3V IC = 4A, VCE = 3V hFE 750 100 Collector-Emitter Saturation Voltage(1) IC = 4.0A, ...