2N6052

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built−In Base−Emitter Shunt Resistors This is a Pb−Free Device* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 100 100 5.0 12 20 0.2 150 0.857 −65 to + 200 Unit Vdc Vdc Vdc Adc Adc W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. http://onsemi.com 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 100 VOLTS, 150 WATTS COLLECTOR CASE BASE 1 EMITTER 2 MARKING DIAGRAM 1 2 TO−204AA (TO−3) CASE 1−07 STYLE 1 2N6052G AYYWW MEX PD, POWER DISSIPATION (WATTS) 160 2N6052 = Device Code 140 G = Pb−Free Packag...