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2N6035 Datasheet

Part Number 2N6035
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors
Datasheet 2N6035 Datasheet2N6035 Datasheet (PDF)

www.DataSheet4U.com (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features http://onsemi.com • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS • Epoxy Meets UL 94 V−0 @ 0.125 in •.

  2N6035   2N6035






Part Number 2N6035
Manufacturers SavantIC
Logo SavantIC
Description (2N6034 - 2N6036) Silicon Power Transistor
Datasheet 2N6035 Datasheet2N6035 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6034 2N6035 2N6036 Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6034 VCBO Collector-base voltage 2N6035 2N6036 2N6034 VCEO Collector-emi.

  2N6035   2N6035







Part Number 2N6035
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description MIDIUM POWER TRANSISTOR
Datasheet 2N6035 Datasheet2N6035 Datasheet (PDF)

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  2N6035   2N6035







Part Number 2N6035
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Datasheet 2N6035 Datasheet2N6035 Datasheet (PDF)

2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VC.

  2N6035   2N6035







(2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors

www.DataSheet4U.com (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features http://onsemi.com • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 8.0 100 40 320 1.5 12 – 65 to + 150 Unit Vdc 3 2 1 TO−225AA CASE 77 STYLE 1 Collector−Base Voltage VCBO Vdc MARKING DIAGRAM Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak VEBO IC IB PD PD TJ, Tstg Vdc Adc Apk mAdc W mW/°C W mW/°C °C Y WW 2N603x G YWW 2 N603xG = Year = Work Week = Device Code x = 4, 5, 6, 8, 9 = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 3.12 83.3 Unit °C/W °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of thi.


2007-04-02 : 16215    2N5458    2N5684    2N5686    2N5883    2N5884    2N5885    2N5886    2N6034    2N6035   


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