2N6029

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6029 Collector-base voltage 2N6030 2N6029 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6030 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -7 -16 -20 -5.0 200 200 -65~200 V A A A W Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N6029 2N6030 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 2N6029 ICEO Collector cut-off current 2N6030 VCE=-60V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 VEB=-7V; IC=0 2N6029 hFE-1 DC current gain 2N6030 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=-16A ; VCE=-2V IE=0 ; VCB=-10V ;f=0.1MHz IC=-1A ; VCE=-20V;f=0.5MHz 1.0 IC=-8A ; VCE=-2V ...