R SEMICONDUCTOR
2N60 600V N-Channel Power MOSFET
FEATURES
● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,high ruggedness
MECHANICAL DATA
PRODUCT SUMMARY
V DS (V)
RDS(on) (Ω)
600 4.4 @ VGS =10V
TO-220AB
2N60
ITO-220AB
2N60F
ID (A)
2
TO-263
2N60D
● Case:TO-220,I...
