2N5870

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5869 VCBO Collector-base voltage 2N5870 2N5869 VCEO Collector-emitter voltage 2N5870 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 5 87.5 150 -65~200 V A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5869 2N5870 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5869 IC=0.1A ;IB=0 2N5870 IC=5A;IB=1A IC=5A; IB=1A VCB=ratedVCBO; IB=0 2N5869 ICEO Collector cut-off current 2N5870 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=40V; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=0.5A ; VCE=10V;f=1MHz 20 4 1.0 100 MHz mA VCE=30V; IB=0 2.0 mA 80 1.0 1.5 1.0 V V mA CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collec...