File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]5LJD
Solid State Division
Power Trans...
File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]5LJD
Solid State Division
Power Transistors
2N5804 2N5805
High-
voltage, High~.Power Silicon N-P-N Power Transistors
For Switching and Amplifier Applications
Features:
JEDEC TO-3
.. Power dissipation (PT) = 110 W at SO V
High-
voltage ratings:
VCEO(sus) = 300 V max. (2NS80S)
= 22S V max: (2NS804)
a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown.
RCA types 2NSB04 and 2NSB05** are silicon n-p-n transistors with high breakdown-
voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdown-
voltage ratings and leakage-currpnt values. These trans"istars are especially suitable for power-switching circuits, switching regulators, converters. inverters, and power
amplifiers. **Formerly RCA Dev. Nos. TA7130 and TA7130A~ respectively.
TERMINAL CONNECTIONS
Pin 1 - Base Pin 2 - Emitter Ca...
