2N5769
Discrete POWER & Signal Technologies
2N5769
C
BE
TO-92
NPN Switching Transistor
This device is designed for...
2N5769
Discrete POWER & Signal Technologies
2N5769
C
BE
TO-92
NPN Switching Transistor
This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15 40 4.5 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N5769 350 2.8 125 357
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N5769
NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CES ICBO ICES IEBO Collector-Emitter Breakdown
Voltage* Collector-Base Breakdown
Voltage Emi...