SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2N5737 2N5738
DESCRIP...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2N5737 2N5738
DESCRIPTION ·With TO-3 package ·Low collector saturation
voltage APPLICATIONS ·For general–purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO PARAMETER 2N5737 Collector-base
voltage 2N5738 2N5737 VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter
voltage 2N5738 Emitter-base
voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=100 Open collector Open base -100 -5 -10 -20 -4 50 150 -65~200 V A A A W Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5737 VCEO(SUS) Collector-emitter sustaining
voltage 2N5738 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Base-emitter on
voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-5A; IB=-0.5A IC=-10A ;IB=-2.5A IC=-10A ;IB=-2.5A IC=-4A ; VCE=-4V VCB...