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2N5686

Inchange Semiconductor
Part Number 2N5686
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
Published Oct 14, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5686 DESCRIPTION ·High DC Current ...
Datasheet PDF File 2N5686 PDF File

2N5686
2N5686

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5686 DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = 25A ·Low Saturation Voltage- VCE(sat)= 1.
0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 50 A IB Base Current-Continuous 15 A PC Collector Power Dissipation @TC=25℃ 300 W TJ Junction Temperature 200 ℃ ...


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