NPN 2N5671 – 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N5671 and 2N5672 are silicon multiepitaxial planer ...
NPN 2N5671 – 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO VCEX VCER IC IB PD TJ TStg Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector-Emitter
Voltage Collector-Emitter
Voltage Collector Current Base Current Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature VEB = -1.5V REB = 50 Ω REB <= 50 Ω
www.DataSheet.net/
Ratings
2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672
Value
90 120 120 150 7.0 120 150 110 140 30 10 140 200 -65 to +200
Unit
V V V V V A A W °C °C
THERMAL CHARACTERISTICS Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
Value
1.25
Unit
°C/W
1|4
09/11/2012
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N5671 – 2N5672
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) VCER(SUS) VCEX(SUS) ICEO
Ratings
Collector-Emitter Sustaining
Voltage (*) Collector-Emitter Sustaining
Voltage (*) Collector-Emitter Sustaining
Voltage (*) Collector Cutoff Current
Test Condition(s)
IC=200 mA, IB=0 IC=0.2 A, RBE=50Ω IC=0.2 A , VBE=-1.5V RBE=50Ω VCE=80 V VCE=110 V, VEB=-1.5 V VCE=135 V, VEB=-1.5 V VCE=100 V, VEB=-1.5 V TC=1...