2N5635

2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment. Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. Low inductance strip line packaging for easier and better broad· band designs. Ceramic Package Choice of Power Levels at 400 MHz. 28 Vdc 2N5635 - 2.5 Watts - 6.2 dB (Min) Gain 2N5636 - 7.5 Watts - 5.7 dB (Min) Gain 2N5637 - 20 Watts - 4.6 dB (Min) Gain *MAXIMUM RATINGS Rating Collector-Emitter Voltage Coliector·Ba.. Voltage Emitter-Base Voltage Collector Current Total Device DissipationflllTC =250 C Derate above 25°C Operating and Storage Junction Temperatura Range -Indicatel JEOEC Registered Oate. Symbol VCEO VCB VEB IC Po TJ.Tstg 2N5636i 2N5636i 2N1i637 35...