2N5635 (SILICON) 2N5636 2N5637
NPN SILICON RF POWER TRANSISTORS
· .. designed for VHF/UHF amplifier applications. Thes...
2N5635 (SILICON) 2N5636 2N5637
NPN SILICON RF POWER TRANSISTORS
· .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment.
Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch.
Low inductance strip line packaging for easier and better broad· band designs.
Ceramic Package
Choice of Power Levels at 400 MHz. 28 Vdc 2N5635 - 2.5 Watts - 6.2 dB (Min) Gain 2N5636 - 7.5 Watts - 5.7 dB (Min) Gain 2N5637 - 20 Watts - 4.6 dB (Min) Gain
*MAXIMUM RATINGS Rating
Collector-Emitter
Voltage Coliector·Ba..
Voltage Emitter-Base
Voltage Collector Current Total Device DissipationflllTC =250 C
Derate above 25°C Operating and Storage Junction
Temperatura Range
-Indicatel JEOEC Registered Oate.
Symbol
VCEO VCB VEB IC
Po
TJ.Tstg
2N5636i 2N5636i 2N1i637
35...