2N5582
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5582 is a s...
2N5582
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5582 is a silicon NPN transistor designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-46 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
75 40 6.0 800 600 -65 to +200 292
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
VCB=60V, TA=150°C
ICEV
VCE=60V, VBE=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
0.6
VBE(SAT) IC=500mA, IB=50mA
hFE VCE=10V, IC=100μA
35
hFE VCE=10V, IC=1.0mA
50
hFE VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=10mA, TA=-55°...
