2N5575

File No. 359 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLlO Power Transistors Solid State Division 2N5575 2N5578 Modified JEDEC TO-3 (O.060·ln.-Dia. Pins) H·1811 High-Current, High-Power, Hometaxial-Base Silicon N-P-N Transistors For Linear and Switching Applications in Military, Commercial, and Industrial Equipment Features: II Maximum safe-area-of operation curves II ISIb-limit line beginning at 25 V II High-current capability a Low saturation voltage at high beta a High-dissipation capability a Low thermal resistance RCA-2N5575 and 2N5578° are high,current, high-power, hometaxial-base silicon n-p-n transistors. They differ in maximum voltage and current ratings. These power transistors are intended for a wide variety of high-current, high-power linear and switching applications such as low· to medium·frequency amplifiers, switching and linear regulators, power-switching circuits, series- or shuntregulator driver and output stages, dc-ta-de conv...