2N5555

ON Semiconductort JFET Switching N–Channel — Depletion 3 GATE 1 DRAIN 2N5555 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.8 –65 to +150 –65 to +150 2 SOURCE Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C) ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate–Source Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) Drain–Source On–Voltage (ID = 7.0 mAdc, VGS = 0) Static Drain–Source On Resistance (ID = 0.1 mAdc, VGS = 0) 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%. SMALL–SIGNAL CHARACTERISTICS Small–Signal Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn–On Delay Time Rise Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1) Turn–Off Delay Time Fall Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, VGS(on) = 0, VGS(off) = –10 Vdc) (See...