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2N5551SC Datasheet

Part Number 2N5551SC
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet 2N5551SC Datasheet2N5551SC Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collector Power Dissipation PC .

  2N5551SC   2N5551SC






Part Number 2N5551S
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet 2N5551SC Datasheet2N5551S Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collec.

  2N5551SC   2N5551SC







EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2N5551SC EPITAXIAL PLANAR NPN TRANSISTOR A G D E L BL 23 1 M DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 1. EMITTER 2. BASE 3. COLLECTOR SOT-23(1) C N K J Marking ZFCType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current ICBO IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * V(BR)CBO V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * hFE * VCE(sat) * VBE(sat) Transition Frequency fT * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. TEST CONDITION VCB=120V, IE=0 VEB=4V, IC=0 IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=.


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